Abstract
An analytical model for the dc current-voltage relationship in a double-diffused channel with a lateral nonuniform doping profile of a DMOS transistor has been developed. The equations are similar forms to the current-voltage equations of a conventional MOS transistor. The velocity saturation effect and the mobility reduction effect caused by a perpendicular electric field are also included. The model was verified by comparison with the results of two-dimensional numerical simulation and the fabricated device with a good agreement. The proposed model in this paper can be very useful for designing and analysing power devices with a double-diffused channel structure.
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