Abstract
A simple analytical model to show the DC characteristics for a non-self-aligned GaN MESFET under dark and illuminated conditions is developed. The model considers the effect of bias dependent parasitic source and drain resistances along with the channel length modulation. The transconductance of the device is evaluated and the theoretically predicted results in dark condition are in good agreement with the experimental data. The model being analytical and simple, can be suitably implemented for both electrical and optical applications.
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