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https://doi.org/10.1109/mwscas.1994.519384
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Cite Publication Date: Aug 3, 1994 |
Affiliation: University of Pittsburgh
A technique is presented to calculate the total channel charge of a dual channel high electron mobility transistor. The current voltage characteristics and the small signal parameters g/sub m/ and g/sub D/ of the device are derived. The effects of parasitic drain and source resistances and channel length modulation are included.
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