Abstract
The response and crosstalk (CTK) of the p-n <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">well</sub> photodiode were studied through device simulations performed with ATLAS and experimental data. As a result, a closed-form and explicit 2-D analytical model for its photoresponse and CTK was developed. The model has very few fitting parameters since it is physically based and describes the CTK dependencies on light conditions and physical, geometrical, and process parameters. This is of great interest for pixel design optimization to fulfill high resolution and small area requirements driven by pixel size reduction. As this model extends a previous one focused on p-n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> devices, the behavior of both the structures was also compared.
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