Abstract

This paper presents a silicon-based grooved multi-layered gate architecture with air as buried oxide layer to improve the self-heating effect (SHE) and also capable of enhancing the short channel effects (SCEs). This structure takes the benefit of the trenched stack gate to decrease the hot carrier effect (HCE) and linearly varied work-function along the gate region to enhance the carrier transport efficiency. An analytical model is formulated for the presented graded work-function (GW) trenched rectangular stacked gate (TRSG) silicon on nothing (SON) MOSFET and validated through TCAD device simulator. The proposed device performances are upgraded with its physical parameters like negative junction depth (NJD). The performance parameters of GW-TRSG SON MOSFET are compared with trenched rectangular gate (TRG) silicon on insulator (SOI) MOSFET in terms of sub-threshold parameters, electron mobility, and higher-order trans-conductance for better linearity and proficiency.

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