Abstract
The analytical transfer matrix method is applied to the evaluation of the tunnelling in the semiconductor heterostructures. An analytical formula of the transmission probabilities across arbitrary shaped potential barriers which includes the variations of the effective masses has been developed in this paper. Various potential barrier structures are analysed and the results are of high precision. Tunnelling resonance is obtained for the double-barrier structure. We can correlate the energy location of the peaks of the transmission probability with the bound state energies of the included potential wells through our analytical transfer matrix method.
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