Abstract
An analytical expression for density of trap states (DOS) related to the surface potential is derived from the Poisson's equation and the surface potential corresponding to certain gate-source voltage is obtained by integrating the low-frequency capacitance-voltage characteristic. It is shown that the DOS for indium-zinc-oxide thin-film transistors (IZO TFTs) may be represented by the superposition of exponential deep states and exponential tail states with the density of deep/tail states (N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DA</sub> /N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TA</sub> ) at the conduction edge as 1.2 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ·eV <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> /9.0 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ·eV <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> and the characteristics energy of deep/tail states (E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DA</sub> /E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TA</sub> ) as 5.0 eV/0.182 eV. These extracted parameters are further verified by the comparison of the measured transfer and output characteristics of IZO TFTs with the simulation results by a 2D device simulator ATLAS (Silvaco). Hence, this extraction method of DOS may be very useful for characterizing metal oxide TFTs since it is analytical, fast, and accurate.
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