Abstract
The method of calculation of alloy concentration profiles near point defect sinks is suggested for homogeneously irradiated dilute binary and concentrated ternary alloys. Analytical expressions for spatial redistribution of alloy components near voids, foil surfaces, motionless dislocations and grain boundaries are derived. These expressions are in qualitative agreement with numerical calculations of the set of diffusion equations and with available experimental data for irradiated Fe-Cr-Ni alloys. It is shown, that the slowest component only is to be accumulated at the sinks, but the other two must migrate away from the sinks in pure substitutional ternary alloys with vacancy mechanism of radiation-induced segregation.
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