Abstract
A new charge-based analytical compact model for the drain current of junctionless (JL) triple-gate MOSFETs is presented, which includes the short-channel effects, the saturation velocity overshoot, the series resistance, and the mobility degradation effects. The proposed model consists of a single analytical equation that covers the depletion operation region in which the bulk conduction determines the drain current. The model is supported by experimental measurements in JL nanowire transistors with channel length varying from 95 to 25 nm and doping concentration $2 \times 10^{19}$ cm $^{\mathrm {-3}}$ . The overall results reveal the very good accuracy of the proposed analytical compact model, making it suitable for circuit simulation tools.
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