Abstract

We present analytic expressions for the dark current-voltage relation of a pm+ junction with a positively charged columnar grain boundary, containing a distribution of defect states in the band gap. A closed form relation for the open-circuit voltage V∞ is provided for an illuminated junction. These findings are verified by direct comparison with numerical simulations, and provide a quantitative understanding of the reduction of V∞ by grain boundaries in thin film photovoltaic materials.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call