Abstract
An analytical charge control model for p-type insulated-gate inverted-structure high electron mobility transistors (I2-HEMTs) and double heterojunction high electron mobility transistors (DH-HEMTs) has been developed. In this model the quasitriangular potential well approximation is used to relate the top-heterojunction Fermi potential to the 2DHG concentration inside the quantum well. Based on this charge-control model, an accurate DC current-voltage relationship is obtained. The results from this model are found to be in agreement with the experimental results
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