Analytical current conduction model for accumulation-mode SOI PMOS devices

K.W Su,J.B Kuo

doi:10.1109/sispad.1996.865300

Analytical current conduction model for accumulation-mode SOI PMOS devices

K.W Su, J.B Kuo

Open Access

https://doi.org/10.1109/sispad.1996.865300

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Publication Date: Sep 2, 1996

Affiliation: National Taiwan University

#Compact Analytical Model #Short-channel SOI + Show 8 more

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Abstract

Summary form only given. This paper reports a compact analytical current conduction model for short-channel accumulation-mode SOI PMOS devices. Based on the study, the current conduction mechanism in a short-channel accumulation-mode SOI PMOS device is different from that in a long-channel one. As verified by the experimental data, the compact analytical model considering channel length modulation and pre-pinchoff velocity saturation gives an accurate prediction of the drain current characteristics.

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