Analytical and visual modeling of InGaN/GaN single quantum well laser based on rate equations

Abstract

An analytical, visual and open source model based on solving the rate equations for InGaN/GaN single quantum well (QW) lasers has been carried out. In the numerical computations, the fourth-order Runge–Kutta method has been used for solving the differential rate equations. The rate equations which have been considered in this simulation include the two level rate equations for the well and separate confinement heterostructure (SCH) layers. We present a new and inexpensive modeling method with analytical, visual and open source capabilities to investigate and comprehend the QW laser characteristics such as time behavior of carriers in SCHs and QW, photon density, output power and gain, and also the output power versus current which presents the threshold current of the laser. The characteristics of the QW lasers, which include laser time response ( P– t), turn-on delay time of lasing and output power–current ( P– I) characteristic and related features such as threshold current and slope efficiency have been investigated. Our model accurately computes the P– t and P– I characteristics such as turn-on delay time, threshold current and slope efficiency, and also illustrates the effects of parameters such as the injection current and geometry.