Abstract
The two-dimensional Poisson equation has been solved analytically to obtain the potential and field distribution in the saturation regime of GaAs MESFETs. A physical analytic model is developed for output current-voltage characteristics and for describing the behavior of electrons in GaAs FETs. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field. The resulting l-V curves are in excellent agreement with experimental data. The field distribution and the electron concentration and velocity profiles are consistent with the physical behavior of electrons in GaAs MESFETs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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