Abstract
AbstractA physical analytical model is developed for the output current voltage characteristics and for describing the behavior of electrons in sub‐micron GaN MESFET's. A semi‐empirical formula has been proposed to approximate the electron drift velocity versus electric field in GaN by fitting it with the Monte Carlo simulation data. It gives a true physical description and an excellent approximation of the velocity field dependence in GaN revealing the presence of a velocity peak which is substantially higher than the saturation velocity at temperature close to 300 K and at typical doping concentration of 1017/cm3. The resulting I‐V curves are in excellent agreement with the experimental data. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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