Abstract
An analytic model is derived to describe the bias-dependent behavior of the subthreshold swing in MOSFETs for the uniform channel and the ion-implanted channel, and is compared to two-dimensional simulation, Tsividis’ model and Brews’ model. This simple analytical model confirms that the subthreshold swing is a function of the gate–source bias and exhibits a global minimum in the weak inversion region. This model is based on Tsividis’ current equations and assumes that the surface potential difference between the drain and the source is small for the gate–source voltage below the threshold voltage. This yields a conventional exponential form of the subthreshold current, and the subthreshold swing can be obtained analytically from this current equation.
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