Abstract
In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance (NC) region could act as a step-up converter of the surface potential in a metal-oxide-semiconductor structure, opening a new route for the realization of transistors with steeper subthreshold characteristics (S <; 60mV/dec). In this paper, a comprehensive physics-based surface potential and a drain current model for the NC field-effect transistor are reported. The model is aimed to evaluate the potentiality of such transistors for low-power switching applications. This paper also sheds light on how operation in the NC region can be experimentally detected.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.