Abstract
Gallium nitride, GaN, is a semiconductor material with several technological applications. In this work we obtain ab initio XANES spectra using FP-LAPW method within the DFT formalism using different potentials (LDA, PBE and TB-mBJ) in order to study the electronic properties of the system.The spectra calculated using the effect of the fractional core hole were compared with experimental data obtaining a very good agreement.
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