Abstract

In this paper, the two Negative Bias Temperature Instability (NBTI) framework components are divided with interface trap generation (Δ Vit) and hole trapping in pre-existing defects (Δ V ht ). The threshold voltage shift (ΔV T ) contribution is verified by two divided components and studied independently. The impact of inter layer (IL) thickness is simulated under NBTI stress using technology computer-aided design (TCAD) software.

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