Abstract
In the switching process of Press Pack IGBT (PPI) module, the phenomenon of nonuniform current distribution invariably happens which reduce the reliability and life time of chips and the module. The uneven current distribution would be caused by some physical reasons such as the clamp force, the temperature; and the electrical reasons including the parasitic inductance of the emitter pillars, the parasitic resistance of the gate connector and the difference of the paralleled chips characteristic, etc. Based on the modeling of two disparate module structures, the parasitic parameter of the emitter pillars and gate connector is extracted in this paper. Then the different equivalent circuits of PPI module are built due to the researches in different factors with the Synopsys Saber software. At last, by comparing the influence of two modules indifferent factors, the simulation results prove the relationship between the pillars distribution and the chip switching losses.
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