Abstract
The purpose of this work is to describe the total ionizing dose effects on a commercial ISSI 4Mb pseudo-static random access memory (PSRAM). Experimental results from an irradiation test performed at the Ionizing Radiation Laboratory at Instituto de Estudos Avançados (LRI/IEAv) using a Co-60 gamma-radiation source were analyzed and compared to simulation results of typical memory circuits and typical memory architecture, in order to identify error patterns and failure mechanisms.
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