Analysis of SEL on Commercial SRAM Memories and Mixed-Field Characterization of a Latchup Detection Circuit For LEO Space Applications

Abstract

A single event latchup (SEL) experiment based on commercial static random access memory (SRAM) memories has recently been proposed in the framework of the European Organization for Nuclear Research (CERN) Latchup Experiment and Student Satellite nanosatellite low Earth orbit (LEO) space mission. SEL characterization of three commercial SRAM memories has been carried out at the Paul Scherrer Institut (PSI) facility, using monoenergetic focused proton beams and different acquisition setups. The best target candidate was selected and a circuit for SEL detection has been proposed and tested at CERN, in the CERN High Energy AcceleRator Mixed-field facility (CHARM). Experimental results were carried out at test locations representative of the LEO environment, thus providing a full characterization of the SRAM cross sections, together with the analysis of the single-event effect and total ionizing dose of the latchup detection circuit in relation to the particle spectra expected during mission. The setups used for SEL monitoring are described, and details of the proposed circuit components and topology are presented. Experimental results obtained both at PSI and at CHARM facilities are discussed.