SEL rate prediction for SRAM using pulsed laser sensitivity mapping

Abstract

The classical approaches for single event latchup( SEL) rate prediction are based on the rectangular parallelepiped( RPP) model of only one sensitive volume. However,the experiment results of SEL sensitivity mapping of static random access memory( SRAM) show that the device has not only one sensitive volume( SV). The in-flight SEL rate of the device was corrected using the experiment results of pulsed laser SEL sensitivity mapping of SRAM K6R4016V1 D. The SEL sensitivity maps of the SRAM by pulsed laser were first obtained and then the SV number of the device was calculated. The SEL rates of the device were predicted and discussed for different space orbits,radiation particles,SV thicknesses and SV number in particular.The results show that SEL rate caused by heavy ion decreases with SV number. The correction of the SV number is essential for SEL rate due to proton direct ionization; otherwise,the contribution of direct ionization of protons to SEL rate would be greatly overestimated.