Abstract
Surface analysis by laser ionization (SALI) has been used to probe thin-film chemical compositions. Ar+ sputtering at 5–7 keV is used for ion beam milling together with nonresonant photoionization of sputtered neutrals. Photoions are analyzed by reflection time-of-flight mass spectrometry. SALI depth profiles of UHV deposited Au on GaAs show diffusion of Ga and As in the Au film and dramatic compositional variation at the interface after annealing at 405 °C for 10 min. Mass spectra taken from different depths within a superconducting thin film of nominal composition YBa2Cu3O7 show a variety of impurity compounds even though critical current densities are quite high.
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