Abstract

The object of the research is electrically conductive ceramics. It aims to analyze the microstructure of electrically conductive ceramic composites based on silicon carbide and investigate the influence of silicon carbide content on their properties. This study is pivotal for enhancing materials used in high-tech applications, particularly in fields where distinct electrical insulation and mechanical characteristics are crucial. The microstructure analysis conducted through scanning electron microscopy confirmed the presence of silicon carbide in all examined ceramic samples, except in those where silicon carbide was not added. Special attention should be given to the sample with 30 % silicon carbide, distinguished by the lowest open porosity. These findings are corroborated by previous research where this sample exhibited superior properties: open porosity – 12.51 %, water absorption – 5.88 %, apparent density – 2.13 g/cm³, specific resistance – 0.43·106 Ω·m. These characteristics indicate low porosity and high structural-physical property values. The results not only affirm the successful incorporation of silicon carbide into the ceramic matrix but also highlight the prospects for applying the researched ceramic materials in areas where electrical insulation and mechanical properties are crucial. Specifically, the sample with 30 % silicon carbide appears particularly promising due to its high characteristics and lower porosity, making it potentially interesting for applications in high-tech industries such as electronics and telecommunications. The conclusions suggest the potential use of these ceramic materials in various high-tech industries where both electrical and mechanical properties are essential. The sample with 30 % silicon carbide, with its exceptional characteristics, holds potential for applications in advanced technologies. Further research in this direction could lead to the development of new materials for effective radiofrequency absorption, finding broad applications in different technological fields.

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