Abstract
In this study, we discuss measurements of the J–V characteristics of an a-Si : H n+-i-n+ structure, and the results of numerical simulation using the AMPS-1D simulation program. Application of the AMPS simulation model to the sample structures considered allows us to determine the structural properties of the a-Si : H n+-i-n+ structure. The one-dimensional simulation program was examined in n+-i-n+ structures with different qualities and thicknesses of the i-layer. We find that the n+/i interface is more abrupt for a device with a high density of states (DOS), resulting in high values of the activation energy (Eact). In contrast, thin samples of good quality (low DOS) give low values of Eact. Analysis by numerical modeling confirms the experimental results.
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