Abstract

Microscopic real-time observation of the solution growth interface of SiC using Fe–Si solvent at 1673 K was successfully performed to understand the interface morphology at the initial stage of solution growth. The growth interface was composed of a number of domains with step–terrace structures originating from either spiral growth of 4H-SiC or two-dimensional island growth of other polytypes. The validity of the measurements of the step structures by bright-field and interference images was confirmed by ex-situ atomic force microscopy. In addition, the encounter between a spiral growth domain and steps from another spiral growth domain was observed, and it was found that a certain step height is needed to stop spiral growth by covering the spiral center.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call