Abstract
In this letter, the response in the drain current ( $\text{I}_\text{D})$ of the amorphous indium–gallium–zinc oxide thin-film transistors under positive-bias illumination stress is measured with respect to time in less than 5 s under light pulses with altering frequencies and duty ratios. The curves of $\text{I}_\text{D}$ under the light pulses are affected by the different defect-reacting rates under illumination and in the dark. By taking the derivative of $\text{I}_\text{D}$ , the trend of the change in the number of defects becomes clear. The total behavior of $\text{I}_\text{D}$ in response to light pulses can be fairly predicted by the integral of the derivative terms with a correction factor of charge trapping.
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