The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

Abstract

In this paper, the reaction rate of oxygen vacancy ( $\text{V}_{\mathrm{ O}}$ ) by the derivatives of threshold voltage ( ${V}$ th) in the amorphous indium–gallium–zinc oxide thin-film transistors under light pulses with altering duty ratios is investigated. More importantly, after collecting and analyzing a lot of experimental results, a comprehensive model named $\text{V}_{\mathrm{ O}}$ pool is proposed. The proposed model can more universally describe the characteristic of $\text{V}_{\mathrm{ O}}$ reacting to the light and its degradation behavior under various kinds of stress condition.