Analysis of the Retention Characteristic in Three dimensional Junction-less Charge Trapping Memory

Abstract

This work studied the retention characteristic of three dimensional cylindrical junction-less charge trapping memory. Both trapped charge and electron concentration distributions along the channel direction are observed by using sentaurus 3D device simulator. Lateral charge migration is significant after programming with 10 years retention. For vertical direction, charge loss toward block layer is more serious than tunnel layer. Nearly no trapped hole loss even after erasing 10 years.