Abstract

The development of multiple-beam devices is required due to the increasing demand of compact, high-frequency, and high-power vacuum devices. A Ka-band multiple-beam extended-interaction oscillator which operates in TM01 mode with a large diameter (as the value is 14.6 mm which is larger than the operating wavelength of 8 mm) to obtain high output power has been put forward. In previous studies, the performance differences of single-beam extended-interaction oscillator with different electric field uniformity can be as high as 70%. Simulation results predicted the multiple-beam device has an average output power of 7.594 kW when a total beam of 3 A, 18 kV and the uniformity parameter is 0.064. Meanwhile, it predicted that the difference of output power of multiple-beam devices with different field uniformity (corresponding uniformity parameter is within 0.064~0.278) is within 2.53% when other operating conditions are unchanged. The results show that the multiple-beam device substantially decreases the influence of the field uniformity, which is an important factor for the performance in the single-beam device. A cold test experiment has been carried out based on perturbation theory to obtain the electric field distribution curves of this device, and this provides a method for studying multiple-beam devices.

Highlights

  • The development of an electronic vacuum device involves obtaining high power and operating in high frequency [1,2,3,4,5]

  • Our team has designed a multiple-beam extended-interaction oscillator (MBEIO) with a large diameter which operates in TM mode [14,15]

  • Theposition position1 1corresponds correspondstotothe electric field atatthe the fact that the perturbation object is not located in the beam tunnel, and the resonant fact that the perturbation object is not located in the beam tunnel, and the resonant frefrequency of

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Summary

Introduction

The development of an electronic vacuum device involves obtaining high power and operating in high frequency [1,2,3,4,5]. 3.3.The power ofof device-0 with operating voltage of 18 andand frequency spectrum at aat a point of the electric field in the output waveguide. 7 shows the output is affected slightly uniformity parameter and keep Figure a relatively stable state. It could be concluded field distribution uniformity. It could be that thethe multiple-beam extended-interaction substantially decreases the it influence with uniformity parameter and keep aoscillator relatively stable state. The which sectionispresents a method for measuring field the influence of electric field uniformity, an important parameter for performance in single-beam extended-interaction oscillator. Effect of field uniformity on device performance in in single-beam extended-interaction. Measuring field uniformity in order to further study the effect of field uniformity on device performance in practical applications.

Analysis Based on Perturbation Theory
Schematic of the Measurement Setup
Results
Conclusions and Discussion

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