Abstract
The quantum efficiency and current vs. potential curves of TiO 2Be photoanodes reported by Stalder and Augustynski have been analyzed according to the Schottky barrier model of the semiconductor-electrolyte interface. The model allows the main physical parameters determining the photoelectrochemical properties of the semiconductor to be determined. According to this data the addition of Be to n-TiO 2 seems to produce a noticeable increase in the minority carrier diffusion length, leading to an improvement of the photoelectrochemical properties of TiO 2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
