Abstract
The mechanisms of nonlinear absorption in transparent materials under irradiation with ultrashort laser pulses are considered theoretically. Nitride semiconductor, sapphire and others transparent dielectrics were investigated. The ablation threshold for these materials is within multi-TW/cm2 range. The model was used based on the tunneling absorption under the irradiation by high-intensity ultrashort pulses in terms of the theory of ionization of solid in a field of strong electromagnetic wave. The effect of the energy gap of material on the threshold of laser ablation was adequately explained.
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