Abstract
The in-plane distribution of growth rate enhancement and bandgap ( E g) of the selectively grown InGaAs/In GaAsP multiple quantum well (MQW) structure using a twin stripe mask is investigated. The dependence of the growth rate enhancement and E g transition profile on the mask widthand mask opening width is investigated experimentally, and discussed by the simulation based on the vapor phase diffusion model of the re-evaporated reactant from the mask to the open area. Growth profile in the direction perpendicular to the stripe is explained by one-dimensional vapor phase diffusion. Bandgap transition length along the mask opening stripe decreases with decreasing the mask width and the mask opening width. In-plane bandgap distribution is calculated by simple two-dimensional diffusion model, and the results are consistent with the experimental data.
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