Abstract
This paper reports on the simulation of a double heterojunction bipolar transistor using the novel GaAs/GaAsBi material system. Published material parameters were used to simulate the device performance using an analytic drift-diffusion device model. DC and RF parameters were calculated as a function of emitter current density, base thickness and doping, and emitter stripe width and doping. Current gain is predicted to be between 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> at a current density of >; 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a bismuth concentration of 1.5%-3%. RF performance was calculated to range from 10 to 30 GHz for fT and from 100 to 120 GHz for f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> at a current density of 105 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , base thickness of 100-200 nm, and emitter stripe width of 0.1-1 μm.
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