Abstract
In the present study, we report the photoluminescence (PL) study of nanoparticles of ZnS implanted with Cu+ ions at the doses of 5×1014, 1×1015 and 5×1015ions/cm2 and annealed at 200 and 300°C. The photoluminescence spectra of the samples implanted at lower doses of 5×1014 and 1×1015ions/cm2 and annealed at 200 and 300°C showed peaks at around 406, 418 and 485nm. The PL emission peak at 485nm was attributed to the transition of electrons from conduction band of ZnS to the impurity level formed by the implanted Cu+ ions. In the PL spectrum of the sample implanted at the highest dose of 5×1015ions/cm2, in addition to the emission peaks observed in the PL spectra of the samples implanted at lower doses, a peak at around 525nm, the intensity of which decreased with increase in the annealing temperature, was observed. The emission peak at 525nm was attributed to the transitions between sulfur and zinc vacancy levels. The full width at half maximum (FWHM) of the emission peak at 406nm was observed to decrease with increase in annealing temperature, indicating lattice reconstruction. The observation of copper ion impurity related peak at 485nm in the PL spectra of samples of the present study indicated that the doping of copper ions into the ZnS lattice is achievable by implanting Cu+ ions followed by annealing.
Published Version
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