Abstract
In this paper, the current–voltage characteristic of the p–n junction diode is modeled using the theories of thermodynamics. In this study a two-sided p–n junction diode is modeled where both the n- and p-type currents as well as the recombination current are considered. To ensure accuracy, the model's equations were solved numerically. The resulting model is a physical model based on the law of conservation of energy. Nevertheless, it is simple and can be easily customized for any device structure. The results from this study show that this model can accurately predict the diode performance.
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