Abstract
Light trapping and current losses are critical factors for the performance of a solar cell. The analysis of the light trapping is generally carried out by the optical path length and back reflectance estimations using the inverse internal quantum efficiency (IQE) approach or the simulation methods. Simulation tools, such as PC1D or wafer ray tracers, provide an improved estimation as compared with the inverse IQE method but are time-consuming. Another approach for light trapping based on the statistical ray optics has been reported in earlier literature, providing a practical limit against the 4n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> limit. This approach has been studied and compared with the well-studied inverse IQE approach. It is further modified for application to the widely available silicon solar cell structures. Also, the current loss analysis has been carried out using the proposed method that separates the optical losses from the electrical losses in the long-wavelength range without the use of simulation. Further, the accuracy of back reflectance values determined using analytical methods, including the inverse IQE method, is examined using PC1D simulations and the current loss analysis.
Published Version
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