Abstract
A 0.09 mm m-plane GaN film is deposited via hydride vapor phase epitaxy (HVPE) on a γ-LiAlO2 substrate. To research the anisotropy between directions with different angles with the c-axis in the m plane, photoluminescence (PL) measurements were carried out. The results show that the electronic transition was influenced by the electric field along the c-axis, which results in an obvious anisotropy, but the influence was weakened by the hexagonal symmetry along the c-axis.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
