Abstract
Based on the analysis of the carrier density change of a symmetric gate reconfigurable field-effect transistor that can operate p- or n-type transistors in an integrated circuit (IC), its unique limiting factor, carrier build-up time, is quantitatively derived for operating speed in addition to conventional resistance and capacitance (RC) and transit time effect. Originating from the characteristic of carrier confinement in a channel between two Schottky potential barriers, the carrier build-up time for the operation could take up to ∼1000 times longer than the transit time across the channel.
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