Abstract
In this paper, an efficient theoretical model has been developed to analyze the temperature-dependent extended X-ray absorption fine structure (EXAFS) Debye-Waller factor (DWF) of diamond (DIA) structure semiconductors. The anharmonic EXAFS cumulants in the cumulant expansion approach are calculated by expanding the quantum anharmonic correlated Einstein (QACE) model based on the anharmonic effective (AE) potential that depends on the characteristics of DIA structure semiconductors. The analysis procedure is based on evaluating the temperature-dependent the amplitude reduction and phase shift of EXAFS oscillation that is expressed in terms of EXAFS DWF using the cumulants. The numerical results of crystalline germanium and silicon semiconductors fit well with the experiments and other methods at various temperatures. The obtained results indicate that the present theoretical model is useful for treating the anharmonic EXAFS signals of DIA structure semiconductors.
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