Abstract
In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current <em>Isub</em> in submicrometer MOSFET's is presented. Impact ionization rate α is remarkably increased with decreasing channel length <em>L</em> and go up from 10<sup>-7</sup> to 6, <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>7</mml:mn><mml:mtext> </mml:mtext><mml:mo>⋅</mml:mo><mml:mtext> </mml:mtext><mml:msup><mml:mrow><mml:mn>10</mml:mn></mml:mrow><mml:mrow><mml:mo>−</mml:mo><mml:mn>7</mml:mn></mml:mrow></mml:msup></mml:mrow></mml:math> when L decrease from 2 to 0.1 μm, this behaviour found expression in a fast increase of the substrate current maximum <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>I</mml:mi><mml:mi>s</mml:mi><mml:mi>u</mml:mi><mml:msub><mml:mi>b</mml:mi><mml:mrow><mml:mi>max</mml:mi><mml:mo>⁡</mml:mo></mml:mrow></mml:msub></mml:mrow></mml:math>. Moreover it is observed that contrarily of long channels, low temperature operation is favourable to reduce hot carrier effects in submicrometer MOSFET's and may represent a promising alternative for the improvement of the performances of Si integrated circuits.
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