Analysis of surface potential for dual-material-double-gate MOSFET based on modeling and simulation

Abstract

This paper proposes a 2-D investigative model for fully depleted dual-material-double-gate (DMDG) metal–oxide–semiconductor-field-effect-transistor (MOSFET) for surface potential profile. Analyses have been made with several oxide thicknesses, doping concentrations and gate voltages. The temperature effect and the interface charge density effect on the proposed surface potential model have also been reported. The different channel length ratios are also incorporated for this investigation. In this model we have also included the effect of high dielectric constant material like HfO2 and made a comparative study with the influence of different parameters. As anticipated, in DMDG structure the surface potential along the channel shows a step function which suppresses many short channel effects (SCEs). In the result the model shows that to get the same value of surface potential, the oxide thickness using HfO2 will be greater than SiO2. All the results of the analytical model outcomes have been endorsed by technology computer aided design (TCAD) simulation results. Tremendous conformity among them is observed.