Analysis of Surface Potential and Electric Field for Fully Depleted Graded Channel Dual-Material-Double-Gate MOSFET through Modeling and Simulation

Abstract

This article is about an elaborative description of two dimensional investigative mathematical structure of fully depleted graded channel (GC) dual-material-double-gate (DMDG) silicon-on-insulator metal–oxide–semiconductor-field-effect-transistor (SOI MOSFET). The surface potential contours in addition with electric field variation throughout the channel establish reduction of short-channel-effects (SCEs). To get better operational analysis, some new characteristics such as temperature effect and interface charge effects have been incorporated in the model. In this representation we also incorporate the consequences of high-k dielectric medium HfO2 instead of SiO2 and have made a comparison with the effect in various frameworks. In the GC DMDG composition, the surface potential as well as electric field throughout the channel shows close to step function variations which help to defeat the hot carrier along with drain-induced-barrier-lowering (DIBL) effects. As an outcome, the structure shows that the surface potential profile increases by using GC DMDG structure over DMDG. All these outcomes of the proposed analytical representation have been compared by TCAD simulation consequence. Very good conformity is observed between them.