Abstract
An infrared (IR) sensor with a lead titanate (PbTiO3) thin film using the technology of microelectromechanical systems (MEMS) has been designed, fabricated, and developed. Anisotropic wet etching of Si(111) orientation in ethylenediamine/pyrocatechol (EDP) solution is used to process a micromachined cantilever beam for better thermal isolation and the array form available. The major IR-sensing part on the cantilever beam consists of a 5-nm PbTiO3 layer deposited by RF sputtering, and a gold (Au) black layer evaporated as an IR radiation absorber, with the active cantilever dimensions of 200 x 100 x 5 mu m3 formed by the etching processes. The substrate effect on the performance of the IR sensor has been studied in both experimental and theoretical analysis. The cantilever structure exhibits much superior performance in both theory and experiment to that of a traditional IR-sensing bulk structure under incident radiation at a wavelength of 970 nm.
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