Analysis of Structural & Optical Properties of Aluminium Nanoparticles decorated on SiOx Nanowires by GLAD Technique

Abstract

In this paper, Glancing angle Deposition (GLAD) Technique have been employed for the growth of Al Nanoparticles (NPs) decorated SiOx Nanowires (NWs) using e-beam evaporation system. The FE-SEM and HR-TEM results reveal the successful growth of Al NPs and SiOx Nanowires above the buffer layer of In2O3 TF. The measured length of SiOx NWs is ∼ 450 nm and the thickness of In2O3 TF (buffer layer) is ∼100 nm. The EDAX analysis confirms the presence of Oxygen (O), Aluminium (Al), Silicon (Si), and Indium (In). The SAED analysis shows the polycrystalline nature of In2O3 and Al which is correlated to the XRD peaks. Also, XRD result confirms the amorphous nature of SiOx NWs. The optical absorption of In2O3 TF/SiOx NWs/Al NPs is found to be ∼1.3 fold compared to In2O3 TF/SiOx NWs, which may be due to the Surface Plasmon Resonance (SPR) effect of Al NPs on the sample. The PL analysis also reveals the photon emission enhancement from the sample with Al NPs. Therefore, this growth technique which enhanced the optical properties may be applicable in a wide range of optoelectronic applications.