Abstract
Tin-doped cadmium oxide (Sn:CdO) transparent thin films with different Sn concentrations were deposited on glass and p-silicon substrates by the chemical spray method at 250 °C. Different concentrations of stannic chloride were used to prepare Sn:CdO thin films. The prepared doped and un-doped CdO films were subjected to X-ray diffraction (XRD), scanning electron microscopy and atomic force microscopy, optical absorption, and electrical analyses to characterize their structural, morphological, optical, and electrical properties, respectively. XRD analysis demonstrated the growth of polycrystalline and cubic CdO with preferential orientation along the (111) plane. Sn-doping shifted the XRD peaks slightly towards a higher Bragg angle and increased the band gap of CdO thin films. Variation in doping concentration also affected the morphology of the films. Optimum Sn-doping increased the electrical conductivity of CdO thin films. Furthermore, to the best of our knowledge, the photoresponse analyses of the fabricated un-doped and doped n-CdO/p-Si heterostructures were performed for the first time in this study.
Highlights
The transparent conducting oxide (TCO) thin films, such as tin oxide, zinc oxide, indium tin oxide, and cadmium oxide (CdO), have attracted considerable attention due to their potential applications in various fields [1,2,3]
We aim to investigate the effects of Sn-doped CdO (Sn)-concentration on morphological, structural, optical, and electrical properties of Sn:CdO
The X-ray diffraction (XRD) pattern revealed the formation of CdO phase with preferential orientation along the (111)
Summary
The transparent conducting oxide (TCO) thin films, such as tin oxide, zinc oxide, indium tin oxide, and cadmium oxide (CdO), have attracted considerable attention due to their potential applications in various fields [1,2,3]. CdO is extensively used for optoelectronic applications such as transparent electrodes, photovoltaics, sensors, optical communications, and flat panel displays [5,6]. It is an n-type semiconductor with a rock-salt crystal structure (FCC) possessing a direct band gap of 2.3–2.5 eV [7]. It has high electrical conductivity, its applications are limited due to its low band gap energy. Doping is required to improve the quality and performance of semiconductor devices and for novel applications [8,9]
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