Analysis of slow-wave transmission lines on multi-layered semiconductor structures including conductor loss

Abstract

Metal lines on semiconductor devices and circuits sometimes show slow-wave phenomena. To determine signal transmission characteristics along the lines, the typical assumption that metal is perfectly conducting is not always valid. A simple and accurate means is used here to include metallic loss in spectral domain analysis of planar transmission lines built on multilayer semiconducting media. Experimental results with a modulation-doped field-effect transistor (MODFET) structure and comparison with the calculations are presented.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>