Analysis of sit I–V characteristics by two-dimensional simulation

Abstract

The I–V characteristics of Static Induction Transistor operating in the transition region are studied using a two-dimensional simulation. This simulation takes both electron and hole continuity into account, including temperature dependence. From the result of this simulation, the transition region is physically interpreted by introducing two new concepts; effective channel width and saddle potential pinning. In the transition region, the effective channel width changes distinctively and electron concentration at the saddle point is saturated by the saddle potential pinning, resulting in the gradual change in the drain current. By extrapolating these concepts into the exponential region, the I–V characteristics are comprehensively interpreted. Furthermore, the temperature coefficient of the drain current which is inverted two times is interpreted consistently by these concepts.