Abstract
A fast approach to grow SiO2 nanowires by rapid thermal annealing (RTA) is demonstrated in the study. The material characteristics of SiO2 nanowires were investigated by field emission scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field (HAADF) image, and energy-filtered TEM (EFTEM). The SiO2 nanowire shows amorphous structures after annealing at 900oC. The HAADF image shows the wire tip is predominantly composed of Pt. Besides, the elemental mapping of EFTEM reveals that the wire consists of Si and O. It is suggested that a high SiO2 growth rate of more than 1 μ/min can be achieved by RTA.
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